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| 型號(hào)： | TPV5051-1 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | BMA 2A, 4 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | TPV5051-1 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 40 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
25
V
BV
CBO
I
C
= 20 mA
45
V
BV
EBO
I
E
= 6.0 mA
4.0
V
h
FE
V
CE
= 20 V I
C
= 800 mA
10
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
(EACH SIDE)
40
pF
P
G
h
C
V
CE
= 28 V
f = 860 MHz
P
out
= 50 W Iq = 2X100 mA
6.5
45
dB
%
NPN SILICON RF POWER TRANSISTOR
TPV5051-1
DESCRIPTION:
The
TPV5051-1
is Designed for AB
Push Pull, Common Emitter from
470 to 860 MHz Applications.
MAXIMUM RATINGS
I
C
2.6 A
(EACH SIDE)
V
CE
25 V
P
DISS
65 W @ T
C
= 25
O
C
(TOTAL)
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.5
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE BMA 2A
1 = EMITTER/FLANGE
3 = BASE 2 = CHAMFERED 45
°
LEADS = COLLECTOR
MIN:
(In/mm)
MAX:
(In/mm)
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.060/1.52
.055/1.40
.124/3.15
.234/6.17
.635/16.13
.092/.234
.555/14.10
.739/18.77
.315/8.00
.002/0.05
.055/1.40
.075/1.91
.060/1.52
.065/1.65
.124/3.15
.253/6.34
.665/16.89
.092/.234
.565/14.35
.749/19.02
.327/8.31
.006/0.15
.065/1.65
.095/2.41
.190/4.83
.257/6.53
.245/6.22
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