- 您現在的位置：買賣IC網 > PDF目錄385948 > TPV591 (ADVANCED SEMICONDUCTOR INC) CONNECTOR ACCESSORY PDF資料下載
參數資料
| 型號： | TPV591 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.280 INCH, FM-4 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | TPV591 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22
UNITS
V
BV
CBO
I
C
= 10 mA
45
V
BV
EBO
I
E
= 1.0 mA
3.5
V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
200
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
3.0
pF
P
g
Pref = 0.5 W f = 860 MHz
SOUND CARRIER
= -7.0 dB
VISION CARRIER
= -8.0 dB
CHROMA
= -16 dB
13
dB
IMD
Pref = 0.5 W
V
CE
= 20 V I
C
= 150 mA
SOUND CARRIER
=-7.0dB
VISION CARRIER
= -8.0 dB
f = 860 MHz
CHROMA
= -16 dB
-58
dB
NPN SILICON RF POWER TRANSISTOR
TPV591
DESCRIPTION:
The
ASI TPV591
is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
300 mA
V
CB
45 V
P
DISS
5.3 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
33.0
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| TPV593 | CONNECTOR ACCESSORY |
| TPV595A | CONNECTOR ACCESSORY |
| TPV6030 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| TPV8100 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| TR0808 | Common Mode Toroidal Coils |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TPV593 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| TPV595 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| TPV595A | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| TPV596 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| TPV596A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。