參數(shù)資料
型號(hào): TPS65573DSST
廠商: TEXAS INSTRUMENTS INC
元件分類(lèi): 穩(wěn)壓器
英文描述: 1.5 A SWITCHED CAPACITOR CONVERTER, PDSO12
封裝: 2 X 3 MM, SON-12
文件頁(yè)數(shù): 10/16頁(yè)
文件大?。?/td> 681K
代理商: TPS65573DSST
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
www.ti.com................................................................................................................................................................................................... SLVS868 – MARCH 2009
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(CHG) = VCC, V(F_ON) = GND,
ICC1
Supply current from VBAT
V(F_EN)= GND,
140
200
A
XFULL = Hi-Z
V(CHG) = VCC, V(F_ON) = GND,
ICC2
Supply current from VCC
V(F_EN) = GND,
2
3
mA
XFULL = Hi-Z
V(CHG) = GND, V(F_ON) = GND,
ICC3
Supply current from VCC and VBAT
1
A
V(F_EN) = GND
ILKG1_SW
Leakage current at SW
V(SW) = 4.2 V
2
A
ILKG2_SW
Leakage current at SW
V(SW) = 45 V
600
A
Isink
Sink current at I_PEAK
VCC = V(I_PEAK) = 3 V
0.1
A
IPEAK1
Lower point of Peak current detection
V(I_PEAK )= 0.1V
0.38
0.58
0.78
A
IPEAK2
Middle point of Peak current detection
V(I_PEAK) = 0.65 V
0.84
1.04
1.24
A
IPEAK3
Upper point of Peak current detection
V(I_PEAK) = 1.5 V
1.30
1.50
1.70
A
RON_XFULL
ON resistance between XFULL and GND
I(XFULL) = 1 mA
1.5
3
k
RON_SW
ON resistance between SW and GND
I(SW) = 1 A, VCC = 3 V
0.4
0.7
RG_IGBT_N
G_IGBT_N ON resistance
V(G_IGBT_N) = GND
3
5
7.5
RG_IGBT_P
G_IGBT_P ON resistance
V(G_IGBT_P) = 3 V
3
5
7.5
Pulldown resistance of CHG, F_ON and
RINPD
V(CHG), V(F_ON), V(F_EN) = VCC
100
k
F_EN
TSD
(1)
Thermal shutdown detection temperature
140
150
160
°C
VBAT + VBAT + VBAT +
VFULL
Charge completion detection voltage at SW
V
28.6
29.0
29.4
VBAT + VBAT + VBAT +
VZERO
Zero current detection at SW
V
10m
25m
40m
Over current protection trigger voltage at
VBAT – VBAT – VBAT –
VOCP
V
SW
150m
100m
50m
(1)
Specified by design
TA = 25°C, VBAT = 4.2 V, VCC = 3 V, VSW = 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
G_IGBT turns high/low after F_ON turns high/low
25
SW OFF after ISW exceeds the threshold defined by I_PEAK
150
ns
tPD
(1)
Propagation delay
XFULL turns Low after VSW exceeds VFULL
200
SW ON after CHG turns high
50
150
s
(1)
Specified by design
Copyright 2009, Texas Instruments Incorporated
3
Product Folder Link(s): TPS65573
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