
SLVSAT3
– SEPTEMBER 2011
REVERSE OVERCURRENT PROTECTION
The TPS54519 implements low side current protection by detecting the voltage across the low side MOSFET.
When the converter sinks current through its low side FET, the control circuit turns off the low side MOSFET if
the reverse current is more than 2.7 A. By implementing this additional protection scheme, the converter is able
to protect itself from excessive current during power cycling and start-up into pre-biased outputs.
POWER GOOD (PWRGD PIN)
The PWRGD pin output is an open drain MOSFET. The output is pulled low when the VSENSE voltage enters
the fault condition by falling below 91% or rising above 107% of the nominal internal reference voltage. There is
a 2% hysteresis on the threshold voltage, so when the VSENSE voltage rises to the good condition above 93%
or falls below 105% of the internal voltage reference the PWRGD output MOSFET is turned off. It is
recommended to use a pull-up resistor between the values of 1k
and 100k to a voltage source that is 6 V or
less. The PWRGD is in a valid state once the VIN input voltage is greater than 0.8 V, typically.
OVERVOLTAGE TRANSIENT PROTECTION
The TPS54519 incorporates an overvoltage transient protection (OVTP) circuit to minimize voltage overshoot
when recovering from output fault conditions or strong unload transients. The OVTP feature minimizes the output
overshoot by implementing a circuit to compare the VSENSE pin voltage to the OVTP threshold which is 109%
of the internal voltage reference. If the VSENSE pin voltage is greater than the OVTP threshold, the high side
MOSFET is disabled preventing current from flowing to the output and minimizing output overshoot. When the
VSENSE voltage drops lower than the OVTP threshold the high side MOSFET is allowed to turn on the next
clock cycle.
THERMAL SHUTDOWN
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 155
°C.
The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal
trip threshold. Once the die temperature decreases below 155
°C, the device reinitiates the power up sequence
by discharging the SS/TR pin to 0 volts. The thermal shutdown hysteresis is 7.5
°C.
SMALL SIGNAL MODEL FOR LOOP RESPONSE
Figure 24 shows an equivalent model for the TPS54519 control loop which can be modeled in a circuit simulation
program to check frequency response and dynamic load response. The error amplifier is a transconductance
amplifier with a gm of 250
μA/V. The error amplifier can be modeled using an ideal voltage controlled current
source. The resistor Ro and capacitor Co model the open loop gain and frequency response of the amplifier. The
1-mV AC voltage source between the nodes a and b effectively breaks the control loop for the frequency
response measurements. Plotting a/c shows the small signal response of the frequency compensation. Plotting
a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by
replacing the RL with a current source with the appropriate load step amplitude and step rate in a time domain
analysis.
Copyright
2011, Texas Instruments Incorporated
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