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參數(shù)資料
| 型號： | tps3617 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | BATTERY-BACKUP SUPERVISOR FOR RAM RETENTION(TPS3617-50 為保持RAM提供電池監(jiān)控的監(jiān)控器) |
| 中文描述： | 電池備份的RAM保持（TPS3617監(jiān)管者50為保持內存提供電池監(jiān)控的監(jiān)控器） |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 279K |
| 代理商： | TPS3617 |
SLVS339B
–
DECEMBER 2000
–
REVISED DECEMBER 2002
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 8
4.5
4.6
4.7
4.8
4.9
5
5.1
–
5
–
4.5
–
4
–
3.5
–
3
IOH
–
High-Level Output Current
–
mA
–
2.5
–
2
–
1.5
–
1
–
0.5
0
TA =
–
40
°
C
TA = 25
°
C
TA = 85
°
C
TA = 0
°
C
HIGH-LEVEL OUTPUT VOLTAGE AT RESET
vs
HIGH-LEVEL OUTPUT CURRENT
VDD = 5 V
VBAT = GND
Expanded View
–
–
VO
Figure 9
0
1
2
3
4
5
6
–
2.5
–
2
–
1.5
–
1
–
0.5
0
TA =
–
40
°
C
TA = 25
°
C
TA = 85
°
C
TA = 0
°
C
–
–
V
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
IOH
–
High-Level Output Current
–
mA
VDD = 5.5 V
PFI = 1.4 V
VBAT = GND
Figure 10
5.10
–
200
–
180
–
160
–
140
–
120
–
100
–
80
–
60
–
40
–
20
IOH
–
High-Level Output Current
–
μ
A
5.15
5.20
5.25
5.30
5.35
5.40
5.45
5.50
5.55
0
TA =
–
40
°
C
TA = 25
°
C
TA = 85
°
C
TA = 0
°
C
HIGH-LEVEL OUTPUT VOLTAGE AT PFO
vs
HIGH-LEVEL OUTPUT CURRENT
VDD = 5.5 V
PFI = 1.4 V
VBAT = GND
Expanded View
–
–
VO
Figure 11
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
TA = 25
°
C
TA = 85
°
C
TA = 0
°
C
TA =
–
40
°
C
–
–
VO
LOW-LEVEL OUTPUT VOLTAGE AT RESET
vs
LOW-LEVEL OUTPUT CURRENT
IOL
–
Low-Level Output Current
–
mA
VDD = 3.3 V
VBAT = GND
相關PDF資料 |
PDF描述 |
|---|---|
| TPS3619 | BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION(用于RAM數(shù)據(jù)保持的后備電源監(jiān)控器) |
| TPS3705 | Processor Supervisory Circuits With Power-Fail(帶電源故障監(jiān)視處理機監(jiān)控電路) |
| TPS3707 | Processor Supervisory Circuits With Power-Fail(帶電源故障監(jiān)視處理機監(jiān)控電路) |
| tps3800(中文) | ULTRA SMALL SUPPLY VOLTAGE(超低電源電壓監(jiān)控器) |
| TPS3823(中文) | Processor Supervisory Circuits(處理器監(jiān)控電路) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TPS3617-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery-Backup Supervisors for RAM Retention |
| TPS3617-50DGK | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3617-50DGK | 制造商:Texas Instruments 功能描述:BATTERY-BACKUP SVS FOR RAM RETEN |
| TPS3617-50DGKG4 | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3617-50DGKR | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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