參數(shù)資料
型號(hào)： tps3617
廠商： Texas Instruments, Inc.
英文描述： BATTERY-BACKUP SUPERVISOR FOR RAM RETENTION(TPS3617-50 為保持RAM提供電池監(jiān)控的監(jiān)控器)
中文描述： 電池備份的RAM保持（TPS3617監(jiān)管者50為保持內(nèi)存提供電池監(jiān)控的監(jiān)控器）
文件頁數(shù)： 10/15頁
文件大小： 279K
代理商： TPS3617
SLVS339B
–
DECEMBER 2000
–
REVISED DECEMBER 2002
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
3
rDS(on)
Static drain-source on-state resistance (VDD to VOUT)
Static drain-source on-state resistance (VBAT to VOUT)
Supply current
vs Output current
vs Output current
4
IDD
VIT
vs Supply voltage
5
Input threshold voltage at RESET
vs Free-air temperature
6
VOH
High-level output voltage at RESET
s High le el o tp t c rrent
vs High-level output current
7, 8
High-level output voltage at PFO
9, 10
VOL
Low-level output voltage at RESET
vs Low-level output current
11, 12
Minimum pulse duration at VDD
Minimum pulse duration at PFI
vs Threshold voltage overdrive at VDD
vs Threshold voltage overdrive at PFI
13
14
Figure 3
500
600
700
800
900
1000
50
75
100
125
150
175
200
TA = 85
°
C
TA = 25
°
C
TA = 0
°
C
TA =
–
40
°
C
–
–
rD
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(V
DD
to V
OUT
)
vs
OUTPUT CURRENT
VDD = 3.3 V
VBAT = GND
IO
–
Output Current
–
mA
Figure 4
5
7.5
10
12.5
15
17.5
20
2.5
4.5
6.5
8.5
10.5
12.5
14.5
–
–
rD
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(V
BAT
to V
OUT
)
vs
OUTPUT CURRENT
IO
–
Output Current
–
mA
TA = 85
°
C
VBAT = 3.3 V
TA = 25
°
C
TA = 0
°
C
TA =
–
40
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS3617-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Battery-Backup Supervisors for RAM Retention
TPS3617-50DGK 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3617-50DGK 制造商:Texas Instruments 功能描述:BATTERY-BACKUP SVS FOR RAM RETEN
TPS3617-50DGKG4 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3617-50DGKR 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
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