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參數(shù)資料
| 型號： | TPS3617-50 |
| 英文描述： | Battery-Backup Supervisors for RAM Retention |
| 中文描述： | 電池備份RAM保持監(jiān)督員 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 214K |
| 代理商： | TPS3617-50 |
TPS3600D20, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336 – DECEMBER 2000
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
detailed description (continued)
TPS3600
VDD
VOUT
BATTON
3 V or 3.3 V
To CMOS RAM
TPS3600
VDD
VOUT
BATTON
D
S
G
GND
GND
(a)
(b)
PMOS FET
Body Diode
Figure 4. Driving an External Transistor With BATTON
backup-battery switchover
In the event of a brownout or power failure, it may be necessary to keep a processor running. If a backup battery
is installed at V
BAT
, the devices automatically connect the processor to backup power when V
DD
fails. In order
to allow the backup battery (e.g., a 3.6-V lithium cell) to have a higher voltage than V
DD
, this family of supervisors
will not connect V
BAT
to V
OUT
when V
BAT
s greater than V
DD
. V
BAT
only connects to V
OUT
(through a 2-
switch)
when V
OUT
falls below V
IT
and V
BAT
is greater than V
DD
. When V
DD
recovers, switchover is deferred either until
V
DD
crosses V
BAT
, or when V
DD
rises above the threshold (V
(SWP)
. V
OUT
will connect to V
DD
through a 2-
(max)
PMOS power switch when V
DD
crosses the reset threshold.
VDD > VBAT
1
VDD > V(SW)
1
VOUT
VDD
VDD
VDD
VBAT
1
0
0
1
0
0
manual switchover (MSWITCH)
While operating in the normal mode from V
DD
, the device can be manually forced to operate in the
battery-backup mode by connecting MSWITCH to V
DD
. The table below shows the different switchover modes.
MSWITCH
GND
STATUS
VDD mode
VDD mode
Switch to battery-backup mode
VDD
GND
VDD
Battery back p mode
Battery-backup mode
Battery-backup mode
Battery-backup mode
If the manual switchover feature is not used, MSWITCH must be connected to ground.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS3617-50DGK | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3617-50DGK | 制造商:Texas Instruments 功能描述:BATTERY-BACKUP SVS FOR RAM RETEN |
| TPS3617-50DGKG4 | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3617-50DGKR | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3617-50DGKRG4 | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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