參數(shù)資料
型號(hào)： TPS3617-50
英文描述： Battery-Backup Supervisors for RAM Retention
中文描述： 電池備份RAM保持監(jiān)督員
文件頁(yè)數(shù)： 8/16頁(yè)
文件大?。?/td> 214K
代理商： TPS3617-50
TPS3600D20, TPS3600D33, TPS3600D50
BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS
SLVS336 – DECEMBER 2000
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
detailed description (continued)
50
VBAT
VDD
3.6 V
25
Equivalent
Source Impedance
50
Cable
50
CEIN
CEOUT
CL
50 pF
GND
VDD
TPS3600
CL Includes load capacitance and scope probe capacitance.
Figure 3. CE Propagation Delay Test Circuit
power-fail comparator (PFI and PFO)
An additional comparator is provided to monitor voltages other than the nominal supply voltage. The power-fail
input (PFI) will be compared with an internal voltage reference of 1.15 V. If the input voltage falls below the
power-fail threshold (V
(PFI)
) of 1.15 V typical, the power-fail output (PFO) goes low. If it goes above 1.15 V plus
about 20-mV hysteresis, the output returns to high. By connecting two external resistors, it is possible to
supervise any voltages above 1.15 V. The sum of both resistors should be about 1 M
, to minimize power
consumption and also to ensure that the current in the PFI pin can be neglected compared with the current
through the resistor network. The tolerance of the external resistors should be not more than 1% to ensure
minimal variation of sensed voltage.
If the power-fail comparator is unused, connect PFI to ground and leave PFO unconnected.
BATTON
Most often BATTON is used as a gate or base drive for an external pass transistor for high-current applications.
In addition it can be also used as a logic output to indicate the battery switchover status. BATTON is high when
V
OUT
is connected to V
BAT
.
BATTON can be directly connected to the base of a PNP transistor (see Figure 4a) or the gate of a PMOS
transistor (see Figure 4b). No current-limiting resistor is required, but a resistor connecting the base of the PNP
to BATTON can be used to limit the current drawn from V
DD
, prolonging battery life in portable equipment. If
you are using a PMOS transistor, however, it must be connected backwards from the traditional method (see
Figure 4b). This method orients the body diode from V
DD
to V
OUT
and prevents the backup battery from
discharging through the FET when its gate is high.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS3617-50DGK 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3617-50DGK 制造商:Texas Instruments 功能描述:BATTERY-BACKUP SVS FOR RAM RETEN
TPS3617-50DGKG4 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3617-50DGKR 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3617-50DGKRG4 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過(guò)電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開(kāi)關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
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