參數(shù)資料
型號： TPS2831PWP
廠商： Texas Instruments, Inc.
英文描述： FAST SYNCHRONOUS-BUCK MOSFET DRIVERS WITH DEADTIME CONTROL
中文描述： 快速同步賽珍珠MOSFET驅(qū)動器與死區(qū)控制
文件頁數(shù)： 5/15頁
文件大?。?/td> 198K
代理商： TPS2831PWP
TPS2830, TPS2831
FAST SYNCHRONOUS-BUCK MOSFET DRIVERS
WITH DEADTIME CONTROL
SLVS196B – JANUARY1999 – REVISED SEPTEMBER 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating virtual junction temperature range,
V
CC
= 6.5 V, ENABLE = High, C
L
= 3.3 nF (unless otherwise noted) (continued)
output drivers
PARAMETER
TEST CONDITIONS
MIN
0.7
TYP
1.1
MAX
UNIT
Hi h id
High-side sink
(see Note 4)
i k
Duty cycle < 2%,
tpw < 100
μ
s
(see Note 3)
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V
VCC = 4.5 V,
VCC = 6.5 V,
VCC = 12 V,
VCC = 4.5 V,
VCC = 6.5 V,
VCC = 12 V,
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V
VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V
VDRV = 4.5 V,
VDRV = 6.5 V
VDRV = 12 V,
VDRV = 4.5 V,
VDRV = 6.5 V,
VDRV = 12 V,
1.1
1.5
A
2
2.4
High-side
High side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100
μ
s
(see Note 3)
1.2
1.4
1.3
1.6
A
Peak output-
current
2.3
2.7
Low-side sink
(see Note 4)
i k
Duty cycle < 2%,
tpw < 100
μ
s
(see Note 3)
VLOWDR = 4 V
VLOWDR = 5 V
VLOWDR = 10.5 V
VLOWDR = 0.5V
VLOWDR = 1.5 V
VLOWDR = 1.5 V
1.3
1.8
2
2.5
A
3
3.5
Low-side
Low side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100
μ
s
(see Note 3)
1.4
1.7
2
2.4
A
2.5
3
5
High-side sink (see Note 4)
5
5
45
High-side source (see Note 4)
45
Output
resistance
45
VLOWDR = 0.5 V
VLOWDR = 0.5 V
VLOWDR = 0.5 V
VLOWDR = 4 V
VLOWDR = 6 V
VLOWDR = 11.5 V
9
Low-side sink (see Note 4)
7.5
6
45
Low-side source (see Note 4)
45
45
NOTES:
3. Ensured by design, not production tested.
4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
deatime control
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
LOWDR
High-level input voltage
Over the VCCrange (see Note 3)
Over the VCC range (see Note 3)
2
Low-level input voltage
1
V
DT
High-level input voltage
Over the VCCrange
Over the VCC range
2
V
Low-level input voltage
1
V
NOTE 3: Ensured by design, not production tested.
digital control terminals
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
High-level input voltage
Low-level input voltage
Over the VCCrange
Over the VCC range
2
1
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