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參數(shù)資料
| 型號： | TPS2301PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING |
| 中文描述： | 雙熱插拔電源與獨立斷路器及功率控制器，高質(zhì)量的報告 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大?。?/td> | 422K |
| 代理商： | TPS2301PW |
TPS2300, TPS2301
DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT
CIRCUIT BREAKER AND POWER-GOOD REPORTING
SLVS265B – FEBRUARY 2000 – REVISED APRIL 2000
17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
gate drive circuitry
The TPS2300/01 includes four separate features associated with each gate-drive terminal:
A charging current of approximately 15
μ
A is applied to enable the external MOSFET transistor. This current
is generated by an internal charge pump that can develop a gate-to-source potential (referenced to DISCH1
or DISCH2) of 9 V–12 V. DISCH1 and DISCH2 must be connected to the respective external MOSFET
source terminals to ensure proper operation of this circuitry.
A discharge current of approximately 75
μ
A is applied to disable the external MOSFET transistor. Once the
transistor gate voltage has dropped below approximately 1.5 V, this current is disabled and the UVLO
discharge driver is enabled instead. This feature allows the part to enter a low-current shutdown mode while
ensuring that the gates of the external MOSFET transistors remain at a low voltage.
During a UVLO condition, the gates of both MOSFET transistors are pulled down by internal PMOS
transistors. These transistors continue to operate even if IN1 and IN2 are both at 0 V. This circuitry also helps
hold the external MOSFET transistors off when power is suddenly applied to the system.
During an overcurrent fault condition, the external MOSFET transistor that exhibited an over-current
condition will be rapidly turned off by an internal pulldown circuit capable of pulling in excess of 400 mA (at
4 V) from the pin. Once the gate has been pulled below approximately 1.5 V, this driver is disengaged and
the UVLO driver is enabled instead. If one channel experiences an overcurrent condition and the other does
not, then only the channel that is conducting excessive current will be turned off rapidly. The other channel
will continue to operate normally.
setting the current-limit circuit-breaker threshold
Using channel one as an example, the current sensing resistor R
ISENSE1
and the current limit setting resistor
R
ISET1
determine the current limit of the channel, and can be calculated by the following equation:
I
LMT1
R
ISET1
50
10
–6
R
ISENSE1
Typically R
ISENSE1
is usually very small (0.001
to 0.1
). If the trace and solder-junction resistances between
the junction of R
ISENSE1
and ISENSE1 and the junction of R
ISENSE1
and R
ISET1
are greater than 10% of the
R
ISENSE1
value, then these resistance values should be added to the R
ISENSE1
value used in the calculation
above.
The above information and calculation also apply to channel 2. Table 2 shows some of the current sense
resistors available in the market.
Table 2. Some Current Sense Resistors
CURRENT RANGE
(A)
PART NUMBER
DESCRIPTION
MANUFACTURER
0 to 1
WSL-1206, 0.05 1%
0.05
, 0.25 W, 1% resistor
0.025
, 0.25 W, 1% resistor
0.015
, 0.25 W, 1% resistor
0.010
, 0.5 W, 1% resistor
0.007
, 0.5 W, 1% resistor
0.005
, 0.5 W, 1% resistor
1 to 2
WSL-1206, 0.025 1%
2 to 4
WSL-1206, 0.015 1%
Vishay Dale
4 to 6
WSL-2010, 0.010 1%
6 to 8
8 to 10
WSL-2010, 0.007 1%
WSR-2, 0.005 1%
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