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參數(shù)資料
| 型號(hào)： | TPS2148IDGNR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 251K |
| 代理商： | TPS2148IDGNR |
TPS2148
TPS2158
SLVS373
–
AUGUST 2001
14
www.ti.com
APPLICATION INFORMATION
power dissipation and junction temperature
The main source of power dissipation for the TPS2148 and TPS2158 comes from the internal voltage regulator
and the N-channel MOSFETs. Checking the power dissipation and junction temperature is always a good
design practice and it starts with determining the r
DS
(on)
of the N-channel MOSFET
according to the input voltage
and operating temperature. As an initial estimate, use the highest operating ambient temperature of interest and
read r
DS
(on)
from the graphs shown in the Typical Characteristics section of this data sheet. Using this value,
the power dissipation per switch can be calculated using:
P
D
r
DS(on)
I
2
Multiply this number by two to get the total power dissipation coming from the N-channel MOSFETs.
The power dissipation for the internal voltage regulator is calculated using:
P
D
VI
–
VO(min)
IO
The total power dissipation for the device becomes:
P
D(total)
PD(voltage regulator)
2
PD(switch)
Finally, calculate the junction temperature:
T
J
P
D
R
JA
T
A
Where:
T
A
= Ambient Temperature
°
C
R
θ
JA
= Thermal resistance
°
C/W, equal to inverting the derating factor found on the power
dissipation table in this datasheet.
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get a reasonable answer.
(1)
(2)
(3)
(4)
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