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| 型號(hào)： | TPIC1321 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 3-HALF H-BRIDGE Driver(三個(gè)半H橋型的驅(qū)動(dòng)器柵極保護(hù)的功率DMOS陣列) |
| 中文描述： | 3半H橋驅(qū)動(dòng)器（三個(gè)半魔橋型的驅(qū)動(dòng)器柵極保護(hù)的功率DMOS的陣列） |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | TPIC1321 |
TPIC1321L
3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS042 – NOVEMBER 1994
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
DISTRIBUTION OF
FORWARD TRANSCONDUCTANCE
P
gfs – Forward Transconductance – S
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
I
VGS – Gate-to-Source Voltage – V
20
10
5
0
1
1
25
1
1
15
1
1
1
1
1
1
1
1
Total Number of
Units = 1596
VDS = 15 V
ID = 625 mA
TJ = 25
°
C
1
3
2
1
0
4
1
2
3
4
5
0
TJ = –40
°
C
TJ = 25
°
C
TJ = 75
°
C
TJ = 125
°
C
TJ = 150
°
C
Figure 9
Figure 10
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
I
VSD – Source-to-Drain Voltage – V
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
C
VDS – Drain-to-Source Voltage – V
240
160
80
0
320
400
480
0
4
8
12
16
800
720
640
560
20
24
28
32
36
40
Coss
Crss
Ciss
VGS = 0
f = 1 MHz
TJ = 25
°
C
Ciss(0) = 307 pF
Coss(0) = 437 pF
Crss(0) = 141 pF
0.1
1
10
1
TJ = –40
°
C
TJ = 25
°
C
TJ = 75
°
C
TJ = 150
°
C
TJ = 125
°
C
10
VGS = 0
Figure 11
Figure 12
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TPIC1321L | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY |
| TPIC1321LDW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY |
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