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| 型號： | TPIC1321 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 3-HALF H-BRIDGE Driver(三個半H橋型的驅(qū)動器柵極保護(hù)的功率DMOS陣列) |
| 中文描述： | 3半H橋驅(qū)動器（三個半魔橋型的驅(qū)動器柵極保護(hù)的功率DMOS的陣列） |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 295K |
| 代理商： | TPIC1321 |
TPIC1321L
3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS042 – NOVEMBER 1994
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 5
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
60
V
VGS(th)
Gate-to-source threshold voltage
1.5
1.75
2.2
V
V(BR)GS
V(BR)SG
Gate-to-source breakdown voltage
IGS = 250
μ
A
ISG = 250
μ
A
18
V
Source-to-gate breakdown voltage
9
V
V(BR)
Reverse drain-to-GND breakdown voltage
(across D1, D2, D3, D4, D5)
Drain-to-GND current = 250
μ
A
100
V
VDS(on)
Drain-to-source on-state voltage
ID = 1.25 A,
See Notes 2 and 3
VGS = 5 V,
0.44
0.5
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.25 A,
VGS = 0 (Z1 – Z6),
See Notes 2 and 3 and Figure 12
0.9
1.1
V
VF
Forward on-state voltage, GND-to-drain
ID = 1.25 A (D1 – D5)
See Notes 2 and 3
4
V
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VDS 48 V,
VGS = 0
VGS = 15 V,
VSG = 5 V,
TC = 25
°
C
TC = 125
°
C
VDS = 0
VDS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
IGSSR
Forward-gate current, drain short circuited to source
20
200
nA
Reverse-gate current, drain short circuited to source
10
100
nA
Ilkg
Leakage current drain-to-GND
Leakage current, drain-to-GND
VDGND= 48 V
VDGND = 48 V
0.05
1
μ
A
0.5
10
rDS(on)
Static drain-to-source on-state resistance
VGS = 5 V,
ID = 1.25 A,
ID 1.25 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25
°
C
0.35
0.4
TC = 125
°
C
0.57
0.6
gfs
Forward transconductance
VDS = 15 V,
See Notes 2 and 3 and Figure 9
ID = 625 mA,
1.6
1.74
S
Ciss
Coss
Short-circuit input capacitance, common source
VDS
f = 1 MHz,
VGS
See Figure 11
200
250
Short-circuit output capacitance, common source
Short-circuit reverse-transfer capacitance,
common source
2. Technique should limit TJ – TC to 10
°
C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
175
220
pF
Crss
40
75
NOTES:
source-to-drain and GND-to-drain diode characteristics, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
trr
Reverse-recovery time
IS = 625 mA,
VGS= 0
VGS = 0,
See Figures 1 and 14
VDS = 48 V,
di/dt = 100 A/
μ
s,
Z1 Z2 and Z3
Z1, Z2, and Z3
45
ns
QRR
Total diode charge
50
nC
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| TPIC1321L | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY |
| TPIC1321LDW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY |
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