參數(shù)資料
型號： TPD1032F
廠商： Toshiba Corporation
英文描述： Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
中文描述： 東芝智能功率器件硅單片功率MOS集成電路
文件頁數(shù)： 4/5頁
文件大小： 112K
代理商： TPD1032F
TPD1032F
2000-03-07 4/5
Preliminary
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient (t
=
10 s)
(Note3)
R
th (ch-a)
62.5
°C/W
Note3: Drive operation: Mount on glass epoxy boad [1 inch
2
×
0.8 t] (in the two devices driving)
Electrical Characteristics
(T
ch
=
25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Drain-source clamp voltage
V
(CL) DSS
V
IN
=
0 V, I
D
=
1 mA
40
60
V
Input threshold voltage
V
th
V
DS
=
13 V, I
D
=
10 mA
1.0
2.8
V
Protective circuit operation input
voltage range
V
IN (opr)
3
7
V
Draint cut-off current
I
DSS
V
IN
=
0 V, V
DS
=
30 V
10
μ
A
I
IN (1)
V
IN
=
5 V, at normal operation
300
Input current
I
IN (2)
V
IN
=
5 V, when protective
circuit is actuated
390
μ
A
Drain-source on resistance
R
DS (ON)
V
IN
=
5 V, I
D
=
1 A
0.25
0.4
Overtemperature protection
T
S
V
IN
=
5 V
150
160
°C
Overcurrent protection
I
S
V
IN
=
5 V
3
A
t
ON
1
30
Switching time
t
OFF
1
V
DD
=
13 V, V
IN
=
5 V,
I
D
=
1 A
60
μ
s
Source-drain diode forward voltage
V
DSF
I
F
=
3 A, V
IN
=
0 V
1.7
V
Test Circuit 1
Switching time measuring circuit
Test Circuit
Measured Waveforms
V
IN
Waveform
V
OUT
Waveform
5 V
90%
t
ON
10%
10%
90%
t
OFF
13 V
To be set so that
I
D
=
1 A.
V
1
P
TPD1032F
IN
OUT GND
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