參數(shù)資料
型號(hào)： TPD1032F
廠商： Toshiba Corporation
英文描述： Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
中文描述： 東芝智能功率器件硅單片功率MOS集成電路
文件頁數(shù)： 3/5頁
文件大?。?/td> 112K
代理商： TPD1032F
TPD1032F
2000-03-07 3/5
Preliminary
Timing Chart
Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is
restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the
overheating detection temperature.
Truth Table
IN
V
OUT
Mode
L
H
H
L
Normal
L
H
H
H
Overcurrent
L
H
H
H
Overtemperature
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS (DC)
20
V
Drain current
I
D
Internally Limited
A
Input voltage
V
IN
0.3 to 7
V
Power dissipation (t
=
10 s)
P
D
2.0 (Note3)
W
Operating temperature
T
opr
40 to 110
°C
Channel temperature
T
ch
150
°C
Storage temperature
T
stg
55 to 150
°C
Note3: Drive operation: Mount on glass epoxy boad [1 inch
2
×
0.8 t] (in the two devices driving)
Overcurrent Protection
Input Signal
Output Current
Current limiting
(limiter)
Overtemperature
protection (Note2)
Overtemperature Protection
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