參數(shù)資料
型號(hào): TPCS8212
廠商: Toshiba Corporation
英文描述: Silicon N Channel MOS Type (U-MOSIII)
中文描述: 硅?頻道馬鞍山型(U型MOSIII)
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 340K
代理商: TPCS8212
TPCS8212
2002-01-17
5
R
DS (ON)
– Ta
I
DR
– V
DS
Capacitance – V
DS
V
th
– Ta
P
D
– Ta
Dynamic input/output characteristics
D
D
G
t
Ambient temperature Ta (°C)
D
R
D
)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
C
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
D
D
G
G
Total gate charge Q
g
(nC)
D
D
0
80
0.4
0.8
1.2
1.6
40
0
40
80
120
160
Common source
VDS
=
10 V
ID
=
200
μ
A
Pulse test
0.1
1
10
Ciss
Coss
Crss
100
10
100
1000
10000
Common source
Ta
=
25°C
VGS
=
0 V
f
=
1 MHz
0
8
24
32
16
0
2
4
6
8
10
0
4
8
12
16
20
Common source
ID
=
6 A
Ta
=
25°C
Pulse test
VDD
=
16 V
VDS
VGS
0
0
0.2
0.4
0.6
0.8
1
1.2
50
100
200
150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
10 s
1
0
0.2
0.4
0.6
0.8
1.0
1.2
3
10
VGS
=
1 V
1
Common source
Ta
=
25°C
Pulse test
3
0
10
5
5
80
40
0
40
120
160
80
Common source
Pulse test
ID
=
1.5, 3, 6 A
VGS
=
2 V
VGS
=
2.5 V
VGS
=
4 V
50
60
30
40
10
20
0
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