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參數(shù)資料
| 型號： | TPCS8204 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 304K |
| 代理商： | TPCS8204 |
TPCS8204
2002-02-14
6
Drain-source voltage V
DS
(V)
D
D
Safe operating area
Pulse width t
w
(S)
r
th
t
w
N
r
t
0.01
0.03
0.1
0.3
1
3
10
100
30
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
*
Single pulse Ta
=
25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
ID max (pulse)
*
10 ms
*
1 ms
*
Single-device value at dual
operation
(Note 3b)
0.001
0.01
0.1
1
10
100
1000
(1)
(2)
(3)
(4)
0.1
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
Single pulse
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPCS8204(TE12L) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 6A 8-Pin TSSOP T/R 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Tape and Reel |
| TPCS8204(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.017 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8204_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type |
| TPCS8204_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
| TPCS8205 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications |
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