參數(shù)資料
型號： TPCA8102
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
中文描述： 東芝場效應(yīng)晶體管硅P通道馬鞍山型（U型MOSIII）
文件頁數(shù)： 3/4頁
文件大小： 182K
代理商： TPCA8102
TPCA8102
2003-08-29
3
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0 V
±
10
μ
A
Drain cut-OFF current
I
DSS
V
DS
=
30 V, V
GS
=
0 V
10
μ
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
20 V
15
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
0.8
2.0
V
V
GS
=
4 V, I
D
=
20 A
9.0
14
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
20 A
4.5
6.0
m
Forward transfer admittance
|Y
fs
|
V
DS
=
10 V, I
D
=
20 A
30
60
S
Input capacitance
C
iss
4600
Reverse transfer capacitance
C
rss
850
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
980
pF
Rise time
t
r
10
Turn-ON time
t
on
20
Fall time
t
f
78
Switching time
Turn-OFF time
t
off
Duty
<
1%, t
w
=
10
μ
s
220
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
109
Gate-source charge 1
Q
gs1
24
Gate-drain (“miller”) charge
Q
gd
V
DD
～
24 V, V
GS
=
10 V,
I
D
=
40
A
25
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
I
DRP
120
A
Forward voltage (diode)
V
DSF
I
DR
=
40 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
～
15 V
0 V
V
GS
10 V
4
I
D
=
20A
V
OUT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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