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參數(shù)資料
| 型號： | TPC8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII) |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 719K |
| 代理商： | TPC8402 |
TPC8402
2002-05-07
4
N-ch
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
—
—
±10
μA
Drain cut
OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
―
―
10
μA
Drain
source breakdown
voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
―
―
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
―
2.0
V
R
DS (ON)
V
GS
= 4 V, I
D
= 2.5 A
―
58
80
m
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.5 A
―
37
50
m
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
3
6
―
S
Input capacitance
C
iss
―
475
―
Reverse transfer capacitance
C
rss
―
85
―
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
―
270
―
pF
Rise time
t
r
―
10
―
Turn
ON time
t
on
―
16
―
Fall time
t
f
―
13
―
Switching time
Turn
OFF time
t
off
―
70
―
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
―
16
―
Gate
source charge 1
Q
gs1
―
11
―
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
24 V, V
GS
= 10 V, I
D
= 5 A
―
5
―
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
—
—
—
20
A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
—
—
1.2
V
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