參數(shù)資料
型號: TPC8209
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
文件頁數(shù): 4/7頁
文件大?。?/td> 312K
代理商: TPC8209
TPC8209
2003-02-18
4
I
D
– V
DS
Drain-source voltage V
DS
(V)
D
D
I
D
– V
DS
Drain-source voltage V
DS
(V)
D
D
I
D
– V
GS
Gate-source voltage V
GS
(V)
D
D
V
DS
– V
GS
D
D
Gate-source voltage V
GS
(V)
|Y
fs
| – I
D
F
f
Drain current I
D
(A)
R
DS (ON)
– I
D
Drain current I
D
(A)
D
R
D
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
3.0
3.2
2.8
10
VGS=2.5V
3.5
6
4
8
3.1
2.9
2.6
2.7
Common source
0
4
8
12
16
20
0
1
2
3
4
5
VGS=2.5V
3.2
3.5
3.1
3.0
10
2.8
4
8
6
2.9
2.7
2.6
Common source
Ta 25°C
Pulse test
0
4
8
12
0
1
2
3
4
5
6
25
100
T
=-55
Common source
VDS 10 V
Pulse test
0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
12
ID=5A
2.5
1.3
Common source
Ta 25°C
Pulse test
0.1
1
10
100
0.1
1
10
100
T
=-55
100
25
Common source
VDS 10 V
Pulse test
1
10
100
1000
0.1
1
10
100
VGS=4V
10
Common source
Ta 25°C
Pulse test
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