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參數(shù)資料
| 型號： | TPC8209 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 312K |
| 代理商： | TPC8209 |
TPC8209
2003-02-18
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 2a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 1a) Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (2)
114
Single-device operation
(Note 2a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (2)
278
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 24 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25
, I
AR
= 5 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: on lower left of the marking indicates Pin 1.
※
Weekly code:
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
FR-4
25.4 25.4 0.8
(unit: mm)
(a)
FR-4
25.4 25.4 0.8
(unit: mm)
(b)
※
Type
TPC8209
Lot No.
(Three digits)
Year of manufacture
(One low-order digits of calendar year)
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