參數(shù)資料
型號: TPC8014
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
中文描述: 東芝場效應晶體管硅?頻道馬鞍山型(U型馬鞍山三)
文件頁數(shù): 6/7頁
文件大?。?/td> 213K
代理商: TPC8014
TPC8014
2004-07-06
6
Pulse width t
w
(S)
r
th
t
w
N
r
t
0.1
0.001
0.01
0.1
10
100
1000
1
100
1000
Single pulse
1
(2)
10
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t
=
10 s
(1)
Drain-source voltage V
DS
(V)
D
D
Safe operating area
0.01
0.01
0.1
1
10
100
0.1
1
10
100
*
Single pulse
Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pluse)
*
10 ms
*
1 ms
*
VDSS max
相關PDF資料
PDF描述
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
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