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參數(shù)資料
| 型號(hào)： | TP5335K1-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | 85 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 405K |
| 代理商： | TP5335K1-G |
2
TP5335
Electrical Characteristics
(@25
O
C unless otherwise specified)
Symbol
Parameter
BV
DSS
V
GS(TH)
ΔV
GS(TH)
I
GSS
Min
-350
-1.0
-
-
-
Typ
-
-
-
-
-
Max
-
-2.4
4.5
-100
-10
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= 0V, I
D
= -100μA
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= -330V
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(TH)
with temperature
Gate body leakage current
I
DSS
Zero gate voltage drain current
-
-
-1.0
mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-5.0
-
-
75
30
1.7
-
110
60
22
20
15
25
25
-1.8
-
nA
I
D(ON)
ON-State drain current
-200
-400
-
-
-
125
-
-
-
-
-
-
-
-
-
mA
R
DS(ON)
Static drain-to-source ON-state
resistance
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
%/
O
C
mmho
pF
V
GS
= 0V,
V
= -25V,
f = 1MHz
ns
V
DD
= -25V,
I
D
R
GEN
= 25,
V
ns
V
GS
= 0V, I
SD
= -200mA
V
GS
= 0V, I
SD
= -200mA
800
Switching Waveforms and Test Circuit
0V
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
V
DD
R
GEN
0V
-10V
Thermal Characteristics
Package
I
(continuous)
1
-85mA
I
(pulsed)
-400mA
Power Dissipation
@T
A
= 25
O
C
0.36W
Θ
(
O
C/W)
200
Θ
(
O
C/W)
350
I
DR
1
I
DRM
TO-236AB
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
-85mA
-400mA
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