- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385941 > TN2130ND (SUPERTEX INC) N-Channel Enhancement-Mode Vertical DMOS FETs PDF資料下載
參數(shù)資料
| 型號： | TN2130ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 85 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 454K |
| 代理商： | TN2130ND |
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2130
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
BV
DSS
/
BV
DGS
300V
R
DS(ON)
(max)
V
GS(th)
(max)
TO-236AB*
Die
25
2.4V
TN2130K1
TN2130ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1T
where
= 2-week alpha date code
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Low Threshold
Ordering Information
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN2425 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓250V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TN2425 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2425N8 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2425ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2435 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V，低門限，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN21-B.29 | 制造商:TEKO 功能描述:Bulk 制造商:TEKO 功能描述:ENCLOSURE TEKNET BLACK/GREY |
| TN21-B.29-AL | 制造商:OKW ENCLOSURES INC 功能描述:ENCLOSURE, ABS, BLACK/GRAY, 6.102 X 3.78 X .953 W/BATTERY |
| TN21-B.30 | 制造商:TEKO 功能描述: |
| TN21-B.30-AL | 制造商:OKW ENCLOSURES INC 功能描述:ENCLOSURE, ABS, WHITE/GRAY, 6.102 X 3.78 X .953 W/BATTERY |
| TN22 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:STARTLIGHT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。