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參數(shù)資料
| 型號： | TN2106 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強型垂直DMOS結構場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（60V的擊穿電壓，2.0V的低門限，?溝道增強型垂直的DMOS結構場效應管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | TN2106 |
7-71
TN2106
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
V
GS(th)
(max)
TO-236AB*
TO-92
Die
2.5
2.0V
TN2106K1
TN2106N3
TN2106ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1L
F
where
F
= 2-week alpha date code
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
S G D
TO-92
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
相關PDF資料 |
PDF描述 |
|---|---|
| TN2106K1 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2106N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2106ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2124 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2124K1 | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TN2106_03 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2106K1 | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106K1-G | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106N3 | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2106N3-G | 功能描述:MOSFET 60V 2.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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