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參數(shù)資料
| 型號： | TMS28F512A-15C4FME |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | GT 37C 37#16 SKT PLUG |
| 中文描述： | 65536 8位快閃記憶體 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 311K |
| 代理商： | TMS28F512A-15C4FME |
TMS28F512A
65536 BY 8-BIT
FLASH MEMORY
SMJS514C – FEBRUARY 1994 – REVISED AUGUST 1997
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
2.4
TYP
MAX
UNIT
VOH
High level output voltage
High-level output voltage
IOH = – 2.5 mA
IOH = – 100
μ
A
IOL = 5.8 mA
IOL = 100
μ
A
A9 = VID max
VI = 0 V to 5.5 V
VI = 0 V to 13 V
VO = 0 V to VCC
VPP = VPPH, Read mode
VPP = VPPL
V
VCC– 0.4
VOL
Low level output voltage
Low-level output voltage
0.45
V
0.1
IID
A9 algorithm-selection-mode current
200
±
1
±
200
±
10
200
±
10
μ
A
II
Input current (leakage)
All except A9
A9
μ
A
IO
Output current (leakage)
μ
A
μ
A
μ
A
IPP1
VPPsupply current (read/standby)
VPP supply current (read/standby)
IPP2
VPP supply current (during program pulse)
(see Note 4)
VPP = VPPH
30
mA
IPP3
VPP supply current (during flash erase)
(see Note 4)
VPP = VPPH
30
mA
IPP4
VPP supply current (during
program/erase-verify) (see Note 4)
VPP = VPPH
5.0
mA
ICCS
VCC supply current
(standby)
TTL-input level
VCC = 5.5 V,
VCC = 5.5 V,
VCC = 5.5 V,
IOUT = 0 mA
VCC = 5.5 V,
E = VIH
E = VCC
E = VIL,
1
mA
μ
A
CMOS-input level
100
ICC1
VCC supply current (active read)
f = 6 MHz,
30
mA
ICC2
VCC average supply current (active write)
(see Note 4)
E = VIL,
Programming in
progress
10
mA
ICC3
VCC average supply current (flash erase)
(see Note 4)
VCC = 5.5 V,
E = VIL,
Erasure in
progress
15
mA
ICC4
VCC average supply current
(program/erase-verify) (see Note 4)
VCC = 5.5 V,
Program/erase-verify in progress
E = VIL,
VPP = VPPH,
15
mA
NOTE 4: Characterization data available.
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
CI
CO
Capacitance measurements are made on sample basis only.
Input capacitance
VI = 0 V,
VO = 0 V, f = 1 MHz
f = 1 MHz
6
pF
Output capacitance
12
pF
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