參數(shù)資料
型號: TMS27C256-150
廠商: Texas Instruments, Inc.
英文描述: Programmable Read-Only Memory(32K×8結(jié)構(gòu),可擦可編程只讀存儲器)
中文描述: 可編程只讀存儲器(32K的× 8結(jié)構(gòu),可擦可編程只讀存儲器)
文件頁數(shù): 9/13頁
文件大小: 280K
代理商: TMS27C256-150
TMS27C256 262144-BIT UV ERASABLE PROGRAMMABLE
TMS27PC256 262144-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS256G – SEPTEMBER 1984 – REVISED JUNE 1995
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
2.08 V
RL = 800
Output
Under Test
CL = 100 pF
(see Note A)
NOTE A: CL includes probe and fixture capacitance.
Figure 2. AC Testing Output Load Circuit
AC testing input/output wave forms
2.4 V
0.4 V
0.8 V
0.8 V
2 V
2 V
A.C. testing inputs are driven at 2.4 V for logic high and 0.4 V for logic low. Timing measurements are made at
2 V for logic high and 0.8 V for logic low for both inputs and outputs.
A0–A14
E
Addresses Valid
ta(E)
G
DQ0–DQ7
Hi-Z
ten(G)
tv(A)
tdis
Output Valid
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
Hi-Z
ta(A)
Figure 3. Read-Cycle Timing
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