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參數(shù)資料
| 型號： | TLP747GF |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 105K |
| 代理商： | TLP747GF |
TLP747GF
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
Thyristor
TLP747GF
Office Machine
Switching Power Supply
The TOSHIBA TLP747GF consists of a photo
thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G.
(both condition and limits)
Peak off
state voltage: 400V min.
Trigger LED current:
1
5mA max.
On
state current:
1
50mA max.
UL recognized: UL
1
577, file no. E67349
BSI approved: BS EN60065:
1
994
Certificate no. 7364
BS EN60950:
1
992
Certificate no. 7365
SEMKO approved: SS4330784, certificate no. 9325
1
63
Isolation voltage: 4000Vrms min.
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no.74286, 9
1
808
Maximum operating insulation voltage: 890,
11
30V
PK
Highest permissible over voltage: 6000, 8000V
PK
no. 9522
1
42
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
Conforming safety standards:
DIN 57 804. VDE0804 /
1
.83
DIN IEC65 / VDE0860 / 8.8
1
DIN IEC380 / VDE0806 / 8.8
1
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC60
1
T
1
/ VDE0750T
1
/ 5.82
BS7002:
1
989 (EN60950)
Pin Configuration (top view)
1
1 : ANODE
2 : CATHODE
3 : NC
4 : CATHODE
5 : ANODE
6 : GATE
5
6
4
2
3
Unit in mm
TOSHIBA
11
7A802
Weight: 0.42 g
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