參數(shù)資料
型號： TLP747JF
廠商： Toshiba Corporation
英文描述： TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
文件頁數(shù)： 1/2頁
文件大?。?/td> 102K
代理商： TLP747JF
TLP747JF
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
Thyristor
TLP747JF
Office Machine
Switching Power Supply
The TOSHIBA TLP747JF consists of a photo
thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747J.
(both condition and limits)
Peak off
state voltage: 600V (min.)
Trigger LED current:
1
5mA (max.)
On
state current:
1
50mA (max.)
UL recognized: UL
1
577, file No. E67349
BSI approved: BS EN60065:
1
994,
certificate No. 7364
BS EN60950:
1
992,
certificate No. 7365
SEMKO approved: SS4330784, certificate No. 9325
1
63
No. 9522
1
42
Isolation voltage: 4000Vrms (min.)
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
certificate no. 74286, 9
1
808
Maximum operating insulation voltage: 890,
11
30V
PK
Highest permissible over voltage: 6000, 8000V
PK
(Note)
When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
Conforming safety standards:
DIN 57 804. VDE0804 /
1
.83
DIN IEC65 / VDE0860 / 8.8
1
DIN IEC380 / VDE0806 / 8.8
1
DIN IEC435 / VDE0805 / draft Nov.84
DIN IEC60
1
T
1
/ VDE0750T
1
/ 5.82
BS7002:
1
989 (EN60950)
Pin Configurations
(top view)
1
2
1 : Anode
2 : Cathode
3 : NC
4 : Cathode
5 : Anode
6 : Gate
6
5
3
4
Unit in mm
TOSHIBA
11
7A802
Weight: 0.42g
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