參數(shù)資料
型號: TLP733F
廠商: Toshiba Corporation
英文描述: GaAs Ired & Photo−Transistor
文件頁數(shù): 1/3頁
文件大小: 141K
代理商: TLP733F
TLP733F,TLP734F
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
Transistor
TLP733F,TLP734F
Office Machine
Switching Power Supply
The TOSHIBA TLP733F and TLP734F consists of a photo
transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
All parameters are tested to the specification of TLP733 and TLP734.
(both condition and limits)
Collector
emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB:
1
00% (min.)
UL recognized: UL
1
577, file no. E67349
BSI approved: BS EN60065:
1
994
Certificate no. 7364
BS EN60950:
1
992
Certificate no. 7365
SEMKO approved: SS4330784
Certificate no. 9325
1
63, 9522
1
42
Isolation voltage: 4000 Vrms (min.)
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 9
1
808
Maximum operating insulation voltage: 890,
11
30 V
PK
Highest permissible over voltage: 6000, 8000 V
PK
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
Conforming safety standards:
DIN 57 804. VDE0804 /
1
.83
DIN IEC65 / VDE0860 / 8.8
1
DIN IEC380 / VDE0806 / 8.8
1
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC60
1
T
1
/ VDE0750T
1
/ 5.82
BS7002:
1
989 (EN60950)
Pin Configurations
(top view)
Unit in mm
TOSHIBA
11
7A802
Weight: 0.42 g
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