參數(shù)資料
型號: TLP733
廠商: Toshiba Corporation
英文描述: GaAs Ired&Photo−Transistor
文件頁數(shù): 1/11頁
文件大小: 171K
代理商: TLP733
TLP733,TLP734
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired&Photo
Transistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo
transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is no
base internal connection for high
EMI environments.
Collector
emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB:
1
00% (min.)
UL recognized: UL
1
577, file no. E67349
BSI approved: BS EN60065:
1
994
Certificate no. 7364
BS EN60950:
1
992
Certificate no. 7365
SEMKO approved: SS4330784
Certificate no. 9325
1
63, 9522
1
42
Isolation voltage: 4000 V
rms
(min.)
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 9
1
808
Maximum operating insulation voltage: 630, 890 V
PK
Highest permissible over voltage: 6000, 8000 V
PK
(Note)
When a VDE0884 approved type is needed,
please designate the “Option (D4)”
7.62 mm pich
standard type
: 7.0 mm (min.)
: 7.0 mm (min.)
1
0.
1
6 mm pich
TLP×××F type
8.0 mm (min.)
8.0 mm (min.)
4.0 mm (min.)
0.5 mm (min.)
Creepage distance
Clearance
Internal creepage path : 4.0 mm (min.)
Insulation thickness
: 0.5 mm (min.)
Pin Configurations
(top view)
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Base
5
6
4
2
1
3
TLP733
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Nc
5
6
4
2
1
3
TLP734
Unit in mm
TOSHIBA
11
7A8
Weight: 0.42 g
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