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參數(shù)資料
| 型號： | TLN105BF |
| 廠商： | Toshiba Corporation |
| 英文描述： | INFRARED LED GAAS INFRARED EMITTER |
| 中文描述： | 紅外發(fā)光二極管GaAs紅外發(fā)射器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 208K |
| 代理商： | TLN105BF |
TLN105B(F)
2007-10-01
1
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN105B(F)
Lead(Pb)-Free
Remote
Control Systems
Opto
Electronic Switches
High radiant intensity: I
E
= 20mW / sr (typ.)
Wide half
angle value:
θ
1/2 = ±23.5° (typ.)
Excellent radiant
intensity linearity. Modulation by pulse operation
and high frequency is possible.
TPS703(F) PIN photodiode with filter to screen out visible light
available as detector for remote control
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
100
mA
Forward current derating
(Ta > 25°C)
Δ
I
F
/ °C
1.33
mA / °C
Pulse forward current
(Note)
I
FP
1
A
Reverse voltage
V
R
5
V
Power dissipation
P
D
T
opr
T
stg
150
20~75
30~100
mW
Operating temperature
°C
Storage temperature
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Note): Pulse width
≦
100
μ
s, repetitive frequency = 100 Hz
Optical And Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
―
1.35
1.5
V
Reverse current
I
R
I
E
P
O
C
T
λ
P
Δλ
1
V
R
= 5 V
I
F
= 50 mA
I
F
= 50 mA
V
R
= 0, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
―
―
10
μ
A
Radiant intensity
12
20
―
mW / sr
Radiant power
―
11
―
mW
Capacitance
―
20
―
pF
Peak emission wavelength
―
950
―
nm
Spectral line half width
―
50
―
nm
Half value angle
θ
2
I
F
= 50 mA
―
±23.5
―
°
Unit: mm
TOSHIBA
4
6B5
Weight: 0.3 g (typ.)
Pin Connection
1.
Anode
2.
Cathode
1
2
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