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參數(shù)資料
| 型號： | TLN108F |
| 廠商： | Toshiba Corporation |
| 英文描述： | INFRARED LEDS PHOTO SENSORS |
| 中文描述： | 紅外線LED傳感器等 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 211K |
| 代理商： | TLN108F |
TLN108(F)
2007-10-01
1
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free
Opto
Electronic Switches
Tape And Card Readers
Equipment Using Infrared Transmission
TO
18 metal package
High radiant intensity: I
E
= 20 mW/sr (typ.)
Excellent radiant
intensity linearity. Modulation by pulse operation
and high frequency is possible.
Highly reliable due to hermetic seal
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
100
mA
Forward current derating
(Ta > 25°C)
Δ
I
F
/ °C
1
mA / °C
Pulse forward current
(Note 1)
I
FP
1
A
Reverse voltage
V
R
5
V
Operating temperature range
T
opr
40~125
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width
≦
100
μ
s, repetitive frequency = 100 Hz
Markings
Pin Connection
1.
Anode
2.
Cathode (case)
1
2
Unit: mm
TOSHIBA
4
5Q2
Weight: 0.33 g (typ.)
Month of manufacture
(January to December denoted by letters A to L respectively)
Letter color
：
Red
Product No. (TL omitted)
Monthly lot number
Year of manufacture
(last digit of year of manufacture)
N108
相關PDF資料 |
PDF描述 |
|---|---|
| TLN110F | INFRARED LED GAAS INFRARED EMITTER |
| TLN110 | INFRARED LED GAAS INFRARED EMITTER |
| TLN113 | INFRARED LED FOR PHOTOSENSORS |
| TLN115AF | Infrared LED GaAs Infrared Emitter |
| TLN117 | INFRARED LED GAAS INFRAED EMITTER |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TLN108LB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:INFRARED LEDS PHOTO SENSORS |
| TLN10MD1 | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:SENSOR PROX NO 10MM DC 2-WIRE 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:BLOCK PROX,10MM,PNP,NO,UNSH |
| TL-N10MD1 | 功能描述:近程傳感器 BLOCK PROX 10MM PNP NO UNSH RoHS:否 制造商:Vishay Semiconductors 感應方式:Optical 感應距離:1 mm to 200 mm 電源電壓:2.5 V to 3.6 V 安裝風格:SMD/SMT 輸出配置:Digital 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 系列:VCNL3020 |
| TLN10ME1 | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:RECT INDUC WIREPROX DC3 UNSHIELD 制造商:Omron Electronic Components LLC 功能描述:Proximity Sensor NO NPN 1cm 10V to 30V 2-Pin 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:BLOCK PRX,10MM,NPN,NO,UNSH |
| TL-N10ME1 | 功能描述:近程傳感器 BLOCK PRX 10MM NPN NO UNSH RoHS:否 制造商:Vishay Semiconductors 感應方式:Optical 感應距離:1 mm to 200 mm 電源電壓:2.5 V to 3.6 V 安裝風格:SMD/SMT 輸出配置:Digital 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 系列:VCNL3020 |
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