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參數(shù)資料
| 型號(hào)： | TISPL758LF3D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES |
| 中文描述： | 綜合對(duì)稱和非對(duì)稱雙向朗訊科技L7581/2/3線卡接入交換機(jī)過電壓保護(hù)器 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | TISPL758LF3D |
TISPL758LF3D
INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE
PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
2
P R O D U C T I N F O R M A T I O N
device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. For negative surges, the high crowbar holding current
prevents d.c. latchup with the SLIC current, as the surge current subsides. The TISPL758LF3 is guaranteed
to voltage limit and withstand the listed international lightning surges in both polarities.
These protection devices are supplied in a small-outline surface mount (D) plastic package. The difference
between the TISPL758LF3D and TISPL758LF3DR versions is shown in the ordering information.
absolute maximum ratings,
T
A
= 25°C (unless otherwise noted)
RATING
SYMBOL
VALUE
-180, +105
-105, +105
UNIT
Repetitive peak off-state voltage
R-G terminals
T-G terminals
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (ANSI C62.41, 1.2/50 μs voltage wave shape)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/200 μs (VDE 0433, 2.0 kV, 10/700 μs voltage wave shape)
0.2/310 μs (I3124, 2.0 kV, 0.5/700 μs voltage wave shape)
5/310 μs (ITU-T K20/21, 2.0 kV, 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 2.0 kV, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
full sine wave
I
TSP
A
175
120
60
50
50
50
50
45
35
I
TSM
16
20
2x1
150
A
50 Hz
60 Hz
Repetitive peak on-state current, 50/60 Hz, (see Notes 2 and 3)
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
I
TSM
di
T
/dt
T
J
T
stg
A
Exponential current ramp, Maximum ramp value < 70 A
A/μs
°C
°C
-40 to +150
-40 to +150
NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150°C lead temperature.
2. Initially the TISPL758LF3 must be in thermal equilibrium with 0°C < T
J
<70°C.
3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions.
recommended operating conditions
MIN
20
0
18
0
10
0
40
TYP
MAX
UNIT
R1
Series Resistor for GR-1089-CORE
Series Resistor for FCC Part 68
first-level surge, operational pass (4.5.7)
10/160 non-operational pass
10/160 operational pass
10/560 non-operational pass
10/560 operational pass
10/700, < 2 kV, operational pass
10/700, 4 kV, operational pass
R1
R1
Series Resistor for ITU-T K20/21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISPL758LF3DR | INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES |
| TISPPBL1D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL1P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL2D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
| TISPPBL2P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISPL758LF3DR | 功能描述:硅對(duì)稱二端開關(guān)元件 RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISPL758LF3DR-S | 功能描述:硅對(duì)稱二端開關(guān)元件 Lucent LCAS protector RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISPPBL1D | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL1DR | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL1DR-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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