參數(shù)資料
型號(hào): TISP8210MDR-S
廠商: BOURNS INC
元件分類: 保護(hù)電路
英文描述: COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
中文描述: TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝: ROHS COMPLIANT, SOIC-8
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 420K
代理商: TISP8210MDR-S
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, T
A
=
25 °C
t
U
V
e
u
V
120
-120
l
b
m
y
V
V
S
g
n
a
R
Repetitive pea
k
off-
s
tate voltage, V
GA
Repetitive pea
k
rever
s
e voltage, V
GK
Non-repetitive pea
k
impul
s
e current (
s
ee Note 3)
2/10
μ
s
(Telcordia GR-1089-CORE, 2/10
μ
s
voltage wave
s
hape)
5/310
μ
s
(ITU-T K.44, 10/700 μ
s
voltage wave
s
hape u
s
ed in K.20/21/45)
10/1000
μ
s
(Telcordia GR-1089-CORE, 10/1000
μ
s
voltage wave
s
hape)
Non-repetitive pea
k
on-
s
tate current, 50/60 Hz (
s
ee Note
s
3 and 4)
100 m
s
1
s
5
s
300
s
900
s
Junction temperature
Storage temperature range
0
7
DRM
V
RRM
I
PPSM
167
70
60
A
I
TSM
11
6.5
3.4
1.4
1.3
A
T
J
T
s
tg
-55 to +150
-65 to +150
°
C
°
C
NOTES: 3. Initially the protector mu
s
t be in thermal equilibrium with T
J
= 25
°
C. The
s
urge may be repeated after the device return
s
to it
s
initial
condition
s
.
4. The
s
e non-repetitive rated terminal current
s
are for the TISP8210MD and TISP8211MD together. Device (A)-terminal po
s
itive
current value
s
are conducted by the TISP8211MD and (K)-terminal negative current value
s
by the TISP8210MD.
t
U
F
n
x
a
M
p
0
y
2
T
2
5
1
n
0
0
0
1
M
1
3
r
u
g
e
S
r
o
a
c
T
p
a
c
o
c
n
u
a
s
i
s
e
s
o
c
e
d
G
e
S
2
2
C
R
C
R
E
R
O
C
-
9
8
0
1
-
R
G
r
o
n
t
n
o
C
e
T
r
e
t
e
m
a
r
a
P
t
U
A
μ
A
μ
V
m
m
p
x
a
5
5
8
M
p
y
T
n
M
s
n
o
I
DRM
I
RRM
V
(BO)
I
H
I
GT
C
O
Repetitive pea
k
off-
s
tate current
Repetitive pea
k
rever
s
e current
Brea
k
over voltage
Holding current
Gate trigger current
Off-
s
tate capacitance
V
D
= V
DRM
, V
GK
V
R
= V
RRM
, V
GA
dv/dt = -250 V/m
s
, R
SOURCE
= 300
, V
GA
(I
K
) I
T
= -1 A, di/dt = 1 A/m
s
, V
GA
(I
K
) I
T
= -5 A, t
p(g)
20
μ
s
, V
GA
f = 1 MHz, V
d
= 1 V, V
D
-
0
-
V
7
2
-
V
8
-
A
A
F
0
5
1
-
V
8
-
8
5
4
V
-
0
V
±
t
n
o
C
e
T
r
e
t
e
m
a
r
a
P
t
U
A
μ
A
μ
V
m
m
p
x
a
5
5
-
2
8
M
p
y
T
n
M
s
n
o
I
DRM
I
RRM
V
(BO)
I
H
I
GT
C
O
Repetitive pea
k
off-
s
tate current
Repetitive pea
k
rever
s
e current
Brea
k
over voltage
Holding current
Gate trigger current
Off-
s
tate capacitance
V
D
= V
DRM
, V
GA
V
R
= V
RRM
, V
GK
dv/dt = 250 V/m
s
, R
SOURCE
= 300
, V
GK
(I
A
) I
T
= 1 A, di/dt = -1 A/m
s
, V
GK
(I
A
) I
T
= 5 A, t
p(g)
20 μ
s
, V
GK
f = 1 MHz, V
d
= 1 V, V
D
0
7
V
V
8
A
A
F
0
2
V
8
V
5
0
-
3
8
V
±
t
n
R
F
o
,
C
e
T
r
e
t
e
m
a
r
a
P
t
U
/
C
°
x
0
a
6
M
1
p
y
T
n
M
s
n
o
R
θ
JA
Junction to ambient thermal re
s
i
s
tance
P
tot
= 0.52 W, T
A
= 70
°
C, 5 cm
2
W
B
C
P
Recommended Operating Conditions
TISP8210MD Electrical Characteristics, TA= 25 °C
Thermal Characteristics
TISP8211MD Electrical Characteristics, TA= 25 °C
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