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參數(shù)資料
| 型號： | TISP8210MDR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 420K |
| 代理商： | TISP8210MDR-S |
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Description
The TI
S
P8210MD / TI
S
P8211MD protector combination has been designed to protect dual polarity supply rail
S
LICs (
S
ubscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been
designed using the latest understanding of programmable protector technology to maximize performance.
The TI
S
P8210MD and TI
S
P8211MD are complementary programmable protection devices. The program or gate pins (
G
1,
G
2) are connected to
the positive and negative
S
LIC battery supplies to give protection which will track the
S
LIC supply levels. The integrated transistor buffer is an
essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or
power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary
loading of the power supply.
The TI
S
P8210MD / TI
S
P8211MD combination is designed to be used in conjunction with the 12.5
Bourns
4A12P-1AH-12R5 Line
Protection Module (LPM). With this solution the application should pass Telcordia
G
R-1089-CORE testing with the 4A12P-1AH-12R5 acting as
the overcurrent protector and coordination element.
The TI
S
P
device plus LPM solution is designed to work in harmony with the system primary protectors.
G
R-1089-CORE issue 3 lists test to
allow for three types of primary protection: Carbon Block (1000 V);
G
as Discharge Tube (600 V) and
S
olid
S
tate (400 V). This solution is
designed to be used with the
G
DT and
S
olid
S
tate options. Under lightning conditions the current through the 12.5
LPM will be 48 A (600 V /
12.5
), which is well within the 60 A capability of the TI
S
P8210MD / TI
S
P8211MD combination.
How to Order
Device
Package
Carrier
For Lead-Free
Termination Finish
Order As
TISP8210MDR-S
1
1
2
8
P
S
I
Marking Code
Standard Quantity
TISP8210MD
2
8
P
S
I
8-SOIC
Embo
ss
ed Tape Reeled
8210M
1
2
8
2500
M
1
S
-
R
D
M
D
M
1
1
t
U
V
e
u
V
-120
120
l
b
m
y
V
V
S
g
n
a
R
Repetitive pea
k
off-
s
tate voltage, V
GK
Repetitive pea
k
rever
s
e voltage, V
GA
Non-repetitive pea
k
impul
s
e current (
s
ee Note 1)
2/10
μ
s
(Telcordia GR-1089-CORE, 2/10
μ
s
voltage wave
s
hape)
5/310
μ
s
(ITU-T K.44, 10/700 μ
s
voltage wave
s
hape u
s
ed in K.20/21/45)
10/1000
μ
s
(Telcordia GR-1089-CORE, 10/1000
μ
s
voltage wave
s
hape)
Non-repetitive pea
k
on-
s
tate current, 50/60 Hz (
s
ee Note
s
1 and 2)
100 m
s
1
s
5
s
300
s
900
s
Junction temperature
Storage temperature range
0
-
DRM
V
7
RRM
I
PPSM
-167
-70
-60
A
I
TSM
-11
-6.5
-3.4
-1.4
-1.3
A
T
J
T
s
tg
-55 to +150
-65 to +150
°
C
°
C
NOTES: 1. Initially the protector mu
s
t be in thermal equilibrium with T
J
= 25
°
C. The
s
urge may be repeated after the device return
s
to it
s
initial
condition
s
.
2. The
s
e non-repetitive rated terminal current
s
are for the TISP8210MD and TISP8211MD together. Device (A)-terminal po
s
itive
current value
s
are conducted by the TISP8211MD and (K)-terminal negative current value
s
by the TISP8210MD.
TISP8210MD Absolute Maximum Ratings, T
A
=
25 °C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
| TISP8250DR-S | 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP83121D | 功能描述:SCR Dual Gate Unidirectional RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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