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參數(shù)資料
| 型號： | TISP8201MDR-S |
| 廠商： | BOURNS INC |
| 元件分類： | 保護電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-012, SO-8 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 335K |
| 代理商： | TISP8201MDR-S |
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
Figure 9. Voltage Overshoot Referenced to Gate Bias Voltage
TISP8200M 2/10 OVERSHOOT
Time - ns
0
100 200 300 400 500 600 700 800 900 1000
O
-20
-10
0
10
20
AI8XAMA
(I
K
) I
T
= -100 A
V
GA
= -80 V
TISP8201M 2/10 OVERSHOOT
Time - ns
0
100
200
300
400
500
O
-20
-10
0
10
20
AI8XANA
(I
A
) I
T
= +100 A
V
GK
= +80 V
Figure 10. Line Protection with TISP8200M and TISP8201M
C1
100 nF
SLIC
V
BATH
C2
100 nF
V
BATR
0 V
0 V
TISP
8201M
RING
TIP
R1
GR-1089-CORE
R1 = 15
min. (1
st
& 2
nd
level)
ITU-T K.20 & K.21
R1 = 10
min for coordination
R1
TISP
8200M
AI8XAE
Figure 9 shows typical overshoots on a 100 A 2/10 waveshape. Both devices are under 10 V peak, which meets the needs of the SLICs listed
earlier.
TISP8200M and TISP8201M Voltage Overshoot
Figure 10 shows a typical circuit for single line protection using one TISP8200M and one TISP8201M. The series resistor values limit the test
impulse currents to within the protector ratings.
Line Protection with TISP8200M and TISP8201M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP8200MDR | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP8200MDR-S | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP8201MDR | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP820XM | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| TISP8210MDR-S | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8211MDR-S | 功能描述:SCR +20mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8250D | 制造商:Bourns Inc 功能描述: |
| TISP8250DR | 制造商:Bourns Inc 功能描述: |
| TISP8250DR-S | 功能描述:SCR PROTECTOR - GATED UNIDIRECTIONAL RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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