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| 型號： | TISP5080H3BJ |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 前瞻性導電單向晶閘管過電壓保護器 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大小： | 299K |
| 代理商： | TISP5080H3BJ |
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
SYMBOL
VALUE
- 58
- 65
- 80
-120
UNIT
Repetitive peak off-state voltage, (see Note 1)
‘5070
‘5080
‘5110
‘5150
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/200 μs (VDE 0433, 10/700 μs voltage wave shape)
0.2/310 μs (I3124, 0.5/700 μs voltage wave shape)
5/310 μs (ITU-T K20/21, 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 140 A
Junction temperature
Storage temperature range
I
TSP
A
500
300
250
220
200
200
200
160
100
I
TSM
55
60
2.1
400
A
di
T
/dt
T
J
T
stg
A/μs
°C
°C
-40 to +150
-65 to +150
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP5xxxH3BJ must be in thermal equilibrium with T
J
= 25°C.
3. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
electrical characteristics for terminal pair, T
A
= 25°C (unless otherwise noted)
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
MIN
TYP
MAX
-5
-10
-70
-80
-110
-150
-80
-90
-120
-160
-0.6
3
UNIT
I
DRM
V
D
= V
DRM
T
A
= 25°C
T
A
= 85°C
μA
V
(BO)
Breakover voltage
dv/dt = -750 V/ms,
R
SOURCE
= 300
‘5070
‘5080
‘5110
‘5150
‘5070
‘5080
‘5110
‘5150
V
V
(BO)
Impulse breakover
voltage
dv/dt
≥
-1000 V/μs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/μs, Linear current ramp,
Maximum ramp value = -10 A
dv/dt = -750 V/ms,
I
F
= 5 A, t
W
= 500 μs
dv/dt
≤
+1000 V/μs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/μs, Linear current ramp,
Maximum ramp value = +10 A
I
T
= -5 A, t
W
= 500 μs
I
T
= -5 A, di/dt = +30 mA/ms
V
I
(BO)
V
F
Breakover current
Forward voltage
R
SOURCE
= 300
-0.15
A
V
‘5070 thru ‘5150
V
FRM
Peak forward recovery
voltage
‘5070 thru ‘5150
5
V
V
T
I
H
On-state voltage
Holding current
-3
-0.6
V
A
-0.15
相關PDF資料 |
PDF描述 |
|---|---|
| TISP61060D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060DR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089A | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61089SDR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISP5080H3BJR | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5080H3BJR-S | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5095H3BJ | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5095H3BJR | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5095H3BJR-S | 功能描述:硅對稱二端開關元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
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