參數(shù)資料
型號: TISP61089A
廠商: Power Innovations International, Inc.
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
中文描述: 雙遠期導(dǎo)電的P -可編程門晶閘管過壓保護
文件頁數(shù): 1/17頁
文件大?。?/td> 319K
代理商: TISP61089A
TISP61089A
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JUNE 1999
Copyright 1999, Power Innovations Limited, UK
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION FOR LSSGR ‘1089
G
Dual Voltage-Programmable Protectors
- Wide 0 to -110 V Programming Range
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
G
Rated for LSSGR ‘1089 Conditions
G
2/10 Protection Voltage Specified
G
Also Rated for ITU-T 10/700 impulses
G
Surface Mount and Through-Hole Options
- TISP61089AP for Plastic DIP
- TISP61089AD for Small-Outline
- TISP61089ADR for Small-Outline Taped
and Reeled
description
The TISP61089A is a dual forward-conducting
buffered p-gate overvoltage protector. It is
designed to protect monolithic SLICs (Subscriber
Line Interface Circuits) against overvoltages on
the telephone line caused by lightning, a.c.
power contact and induction. The TISP61089A limits voltages that exceed the SLIC supply rail voltage. The
TISP61089A parameters are specified to allow equipment compliance with Bellcore GR-1089-CORE,
Issue 1.
WAVE SHAPE
‘1089 TEST CLAUSE
AND TEST #
4.5.8 Second-Level 1
4.5.7 First-Level 3
I
TSP
A
120
30
2/10 μs
10/1000 μs
60 Hz POWER
FAULT TIME
100 ms
1 s
5 s
300 s
900 s
‘1089 TEST CLAUSE
AND TEST #
4.5.13 Second-Level 2
4.5.13 Second-Level 2
4.5.13 Second-Level 2
4.5.13 Second-Level 1
4.5.13 Second-Level 1
I
TSM
A
10
4.4
2.1
0.84
0.83
ELEMENT
FIRST-LEVEL
V @ 56 A
6
SECOND-LEVEL
V @ 100 A
8
Diode
Crowbar
V
GG
= -48 V
-57
-60
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of
-10 V to -100 V. The protector gate is connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection voltage will then track the negative supply
voltage the overvoltage stress on the SLIC is minimised.
device symbol
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
V
GG,
applied to the G terminal.
SD6XAE
A
K1
G
K2
MD6XAN
D PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K1
A
A
K2
G
K1
K2
NC
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
MD6XAV
P PACKAGE
(TOP VIEW)
NC - No internal connection
Terminal typical application names shown in
parenthesis
1
2
3
4
5
6
7
8
K2
G
K1
NC
K1
A
A
K2
(Tip)
(Ground)
(Ground)
(Ring)
(Gate)
(Tip)
(Ring)
相關(guān)PDF資料
PDF描述
TISP61089SDR DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SD DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089AS DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP61089AD 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089ADR 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089ADR-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089AD-S 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP61089AP 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube