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參數(shù)資料
| 型號： | TIP3055 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | TIP3055 |
TIP3055
NPN SILICON POWER TRANSISTOR
2
DECEMBER 1970 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Voltage between
base and emitter
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I
C
= 30 mA
I
B
= 0
(see Note 5)
60
V
I
CER
V
CE
= 70 V
R
BE
= 100
1
mA
I
CEO
V
CE
= 30 V
I
B
= 0
0.7
mA
I
CEV
V
CE
= 100 V
V
BE
= -1.5 V
5
mA
I
EBO
V
EB
= 7 V
I
C
= 0
5
mA
h
FE
V
CE
= 4 V
V
CE
= 4 V
I
B
= 0.4 A
I
B
= 3.3 A
I
C
= 4 A
I
C
= 10 A
I
C
= 4 A
I
C
= 10 A
(see Notes 5 and 6)
20
5
70
V
CE(sat)
(see Notes 5 and 6)
1.1
3
V
V
BE
V
CE
= 4 V
I
C
= 4 A
(see Notes 5 and 6)
1.8
V
h
fe
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
15
|
h
fe
|
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
1.39
35.7
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= 6 A
V
BE(off)
= -4 V
I
B(on)
= 0.6 A
R
L
= 5
I
B(off)
= -0.6 A
t
p
= 20 μs, dc
≤
2%
0.6
1
μs
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| TIP3055-S | 功能描述:兩極晶體管 - BJT 60V 15A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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