參數(shù)資料
型號(hào): TIP127F
英文描述: NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
中文描述: npn型/新進(jìn)步黨的功率達(dá)林頓晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 138K
代理商: TIP127F
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
TIP122F
NPN
TIP127F
PNP
TO-220FP
Designed for General-Purpose Amplifier and Low-Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current -Continuous
Collector Current (Peak)
Base Current
Total Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
Total Power Dissipation @ Ta=25 deg C
Derate Above 25 deg C
Unclamped Inductive Load Energy (1)
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
From Junction to Ambient
From Junction to Case
(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter (sus) Voltage
Collector Cut off Current
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
VALUE
100
100
5.0
5.0
8.0
120
65
0.52
2.0
0.016
50
150
-65 to +150
UNIT
V
V
V
A
A
mA
W
W/deg C
W
W/deg C
mj
deg C
deg C
PD
E
Tj
Tstg
Rth(j-a)
Rth(j-c)
62.5
1.92
deg C/W
deg C/W
SYMBOL
VCEO (sus) * IC=100mA, IB=0
ICBO
VCB=100V, IE=0
ICEO
IB=O, VCE=50V
IEBO
VEB=5V,IC=0
VCE(Sat)*
IC=3A, IB=12mA
IC=5A, IB=20mA
VBE(on) *
IC=3A, VCE=3V
hFE*
IC=0.5A, VCE=3V
IC=3A, VCE=3V
TEST CONDITION
MIN
100
-
-
-
-
-
-
1.0
1.0
MAX
-
0.2
0.5
2.0
2.0
4.0
2.5
-
-
UNIT
V
mA
mA
mA
V
V
V
K
K
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
E
C
B
Transys
Electronics
L I
M
I T E
D
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