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參數(shù)資料
| 型號： | TIP123 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Si-Epitaxial PlanarTransistors |
| 中文描述： | 硅外延PlanarTransistors |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | TIP123 |
1
) Tested with pulses t
= 300 μs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 μs, Schaltverhltnis
≤
2%
2
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
2
Darlington Transistors
TIP120, TIP121, TIP122
Characteristics (T
j
= 25°C)
Kennwerte (T
j
= 25°C)
Typ.
Min.
Max.
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V
Collector saturation voltage – Kollektor-Sttigungsspg.
1
)
I
EB0
–
–
2 mA
I
C
= 3 A, I
B
= 12 mA
I
C
= 5 A, I
B
= 20 mA
Base-Emitter on-voltage – Basis-Emitter-Spannung
1
)
V
CEsat
V
CEsat
–
–
–
–
2 V
4 V
I
C
= 3 A, V
CE
= 3 V
DC current gain – Kollektor-Basis-Stromverhltnis
1
)
V
BEon
–
–
2.5 V
V
CE
= 3 V, I
C
= 0.5 A
V
CE
= 3 V, I
C
= 3 A
Small signal current gain – Kleinsignal-Stromverstrkung
h
FE
h
FE
1000
1000
–
–
–
–
V
CE
= 4 V, I
C
= 3 A, f = 1 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
h
fe
4
–
–
V
CB
= 10 V, I
E
= i
e
= 0, f = 100 kHz
Thermal resistance – Wrmewiderstand
C
CB0
–
–
200 pF
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehuse
R
thA
R
thC
62.5 K/W
2
)
2 K/W
Admissible torque for mounting
Zulssiges Anzugsdrehmoment
M 4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
TIP125, TIP126, TIP127
Equivalent Circuit – Ersatzschaltbild
B1
C2
E2
T1
T2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP126 | Si-Epitaxial PlanarTransistors |
| TIP125 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| TIP126 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| TIP125 | Power Darlingtons for Linear and Switching Applications |
| TIP126 | Power Darlingtons for Linear and Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP125 | 功能描述:達(dá)林頓晶體管 PNP Epitaxial Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP125 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP125_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Si-Epitaxial Planar Darlington Power Transistors |
| TIP125_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Darlington Transistor |
| TIP125_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Silicon PNP Darlington Power Transistors |
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