- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384976 > TIM6472-8UL (Toshiba Corporation) MICROWAVE POWER GaAs FET PDF資料下載
參數(shù)資料
| 型號(hào)： | TIM6472-8UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | TIM6472-8UL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM6472-8UL
TECHNICAL DATA
FEAT URES
n
HIGH POWER
P1dB=39.5dBm at 6.4GHz to 7.2GHz
n
HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
38.5
39.5
Power Gain at 1dB Gain
Compression Point
Drain Current
G
1dB
dB
8.5
9.5
I
DS1
G
η
add
IM
3
A
-44
2.2
36
2.6
±
0.6
Gain Flatness
Power Added Efficiency
dB
%
V
DS
= 10
V
f
= 6.4 to 7.2GHz
3rd Order Intermodulation
Distortion
dBc
-47
Drain Current
Channel Temperature Rise
I
DS2
Tch
Two-Tone Test
Po= 28.5dBm
(Single Carrier Level)
A
°
C
2.2
2.6
80
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 3.0A
V
GSoff
V
DS
=
3V
I
DS
= 30mA
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -100
μ
A
UNIT
mS
MIN. TYP. MAX.
1800
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
5.2
Gate-Source Breakdown
Voltage
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
2.5
3.5
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. J un. 2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIM7785-12UL | BROAD BAND INTERNALLY MATCHED FET |
| TIM7785-4UL | MICROWAVE POWER GaAs FET |
| TIP100 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP101 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP102 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM6472-8UL_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz |
| TIM684K035POX | 制造商:Cornell Dubilier Electronics 功能描述: 制造商:Mallory Sonalert Products Inc 功能描述: |
| TIM684K050POX | 制造商:Mallory Sonalert Products Inc 功能描述: |
| TIM685K010P0X | 功能描述:鉭質(zhì)電容器-固體鉛 6.8uF 10Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray |
| TIM685K015P0X | 功能描述:鉭質(zhì)電容器-固體鉛 6.8uF 15Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。