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參數(shù)資料
| 型號： | TIM3742-8UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | TIM3742-8UL |
MICROWAVE POWER GaAs FET
MICROWAVE SE MICONDUCTOR
TECHNICAL DATA
TIM3742-8UL
FEAT URE S
HIGH POWER
BROAD BAND INTERNALLY MATCHED
P1dB=39.5dBm at 3.7GHz to 4.2GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=11.0dB at 3.7GHz to 4.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P
1dB
dBm
38.5
39.5
Power Gain at 1dB
Compression Point
G
1dB
dB
10.0
11.0
Drain Current
I
DS1
G
η
add
IM
3
A
-44
2.2
37
2.6
±
0.6
Gain Flatness
dB
Power Added Efficiency
V
DS
= 10
V
f
= 3.7 – 4.2GHz
%
3rd Order Intermodulation
Distortion
dBc
-47
Drain Current
I
DS2
Tch
Two Tone Test
Po= 28.5dBm
(Single Carrier Level)
A
°
C
2.2
2.6
Channel Temperature Rise
V
DS
X
I
DS
X
R
th(c-c)
80
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
= 3.0A
V
DS
=
3V
I
DS
= 30mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -100
μ
A
UNIT
mS
MIN.
TYP. MAX.
1800
Pinch-off Voltage
V
GSoff
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
A
5.2
7.0
Gate-Source Breakdown
Voltage
V
GSO
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
2.5
3.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000
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