參數(shù)資料
型號(hào)： TIM3742-25UL
廠商： Toshiba Corporation
英文描述： MICROWAVE POWER GaAs FET
中文描述： 微波功率GaAs場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 57K
代理商： TIM3742-25UL
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM3742-25UL
TECHNICAL DATA
FEAT URES
n
HIGH POWER
P1dB=44.5dBm at 3.7GHz to 4.2GHz
n
HIGH GAIN
G1dB=10.5dB at 3.7GHz to 4.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
43.5
44.5
Power Gain at 1dB Gain
Compression Point
Drain Current
G
1dB
dB
9.5
10.5
I
DS1
G
η
add
IM
3
A
-44
6.8
38
7.6
±
0.6
Gain Flatness
Power Added Efficiency
dB
%
V
DS
= 10
V
f
= 3.7 to 4.2GHz
3rd Order Intermodulation
Distortion
dBc
-47
Drain Current
Channel Temperature Rise
I
DS2
Tch
Two-Tone Test
Po=33.5dBm
(Single Carrier Level)
A
°
C
6.8
7.6
80
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 28
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 8.0A
V
GSoff
V
DS
=
3V
I
DS
= 80mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -280
μ
A
UNIT
mS
MIN. TYP. MAX.
5000
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
14.4
Gate-Source Breakdown
Voltage
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
1.2
1.5
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. J un. 2006
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