參數(shù)資料
型號: TIM1414-18L-252
廠商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場效應(yīng)管
文件頁數(shù): 4/4頁
文件大小: 50K
代理商: TIM1414-18L-252
4
TIM1414-18L-252
0
20
40
60
80
100
0
40
80
120
160
200
Tc (
°
C)
PT(W)
Power Dissipation vs. Case Temperature
-60
-50
-40
-30
-20
30
32
Po(dBm), Single Carrier Level
34
36
38
40
V
DS
= 9V
I
DSQ
4.4A
f= 14.5GHz
f= 5MHz
IM3 vs. Output Power Characteristics
IM3(dBc)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIM1414-2-252 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ, 15W - Trays
TIM1414-2L 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ, 15W - Trays
TIM1414-30L 制造商:Toshiba America Electronic Components 功能描述:
TIM1414-4-252 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ, 30W - Trays
TIM1414-4LA 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 14GHZ, 30W - Trays