參數(shù)資料
型號(hào): TIM1112-15L
廠(chǎng)商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 454K
代理商: TIM1112-15L
4
T IM1112-15L
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc(
°
C )
IM3 vs. Output Power Characteristics
VDS=9V
freq.=12.7GHz
f=5MHz
Pout(dBm) @Single carrier level
0
40
80
120
160
200
P
60
30
0
24
I
26
28
30
32
34
-10
-20
-30
-40
-50
-60
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TIM1112-2 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 12GHZ, 15W - Trays
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TIM1213-10L 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 13GHZ, 60W - Trays