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參數(shù)資料
| 型號： | TIM1112-15L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 454K |
| 代理商： | TIM1112-15L |
2
T IM1112-15L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage
PACKAGE OUTLINE (2-11C1B)
A
W
°
C
°
C
11.5
60.0
175
-65
～
+175
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
11.0 MAX.
0
1
±
0
0
-
+
2
±
0
5
0.6
±
0.15
17.0
±
0.3
21.5 MAX..
1
±
0
3
±
0
2
2
4-R3.0
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PDF描述 |
|---|---|
| TIM1112-4 | MICROWAVE POWER GaAs FET |
| TIM1414-15L | MICROWAVE POWER GaAs FET |
| TIM1414-18L-252 | MICROWAVE POWER GaAs FET |
| TIM1414-30L | MICROWAVE POWER GaAs FET |
| TIM1415-2 | MICROWAVE POWER GaAs FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TIM1112-2 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 12GHZ, 15W - Trays |
| TIM1112-4 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 12GHZ, 30W - Trays |
| TIM1112-4UL | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| TIM1112-8 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 12GHZ, 60W - Trays |
| TIM1213-10L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 13GHZ, 60W - Trays |
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