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參數(shù)資料
| 型號(hào)： | TIC226 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | TIC226 |
TIC226 SERIES
SILICON TRIACS
4
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 7.
Figure 8.
PARAMETER MEASUREMENT INFORMATION
MAX RMS ON-STATE CURRENT
vs
T
C
- Case Temperature - °C
0
25
50
75
100
125
150
I
T
0
1
2
3
4
5
6
7
8
9
10
TI01AB
CASE TEMPERATURE
MAX AVERAGE POWER DISSIPATED
vs
I
T(RMS)
- RMS On-State Current - A
0
2
4
6
8
10
12
14
16
P
(
0
4
8
12
16
20
24
28
32
TI01AC
RMS ON-STATE CURRENT
Conduction Angle = 360 °
Above 8 A rms
See I
TSM
Figure
T
J
= 110 °C
V
AC
V
MT2
I
MT2
DUT
See
Note A
R
G
C1
R1
I
G
V
AC
I
MT2
V
MT2
I
G
I
TRM
dv/dt
10%
63%
L1
V
DRM
50 Hz
PMC2AA
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 μs.
Figure 9.
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| TIC226D | SILICON TRIACS |
| TIC226M | SILICON TRIACS |
| TIC226N | SILICON TRIACS |
| TIC226S | SILICON TRIACS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIC226A | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226A_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226B | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226C | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226D | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:SILICON TRIACS |
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