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參數(shù)資料
| 型號(hào)： | TIC226 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON TRIACS |
| 中文描述： | 硅雙向可控硅 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | TIC226 |
3
APRIL 1971 - REVISED MARCH 1997
TIC226 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
Figure 6.
HOLDING CURRENT
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
H
0·1
1
10
100
1000
TC01AD
CASE TEMPERATURE
V
supply
+
-
V
AA
= ± 12 V
I
= 0
Initiating I
TM
= 100 mA
GATE FORWARD VOLTAGE
vs
I
GF
- Gate Forward Current - A
0·0001
0·001
0·01
0·1
1
V
G
0·01
0·1
1
10
TC01AC
GATE FORWARD CURRENT
I
A
= 0
T
C
= 25 °C
QUADRANT 1
LATCHING CURRENT
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
L
1
10
100
1000
TC01AE
CASE TEMPERATURE
V
AA
= ± 12 V
V
supply
I
GTM
+ +
+ -
- -
- +
SURGE ON-STATE CURRENT
vs
Consecutive 50-Hz Half-Sine-Wave Cycles
1
10
100
1000
I
T
1
10
100
TI01AA
CYCLES OF CURRENT DURATION
No Prior Device Conduction
Gate Control Guaranteed
T
C
≤
85 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIC226D | SILICON TRIACS |
| TIC226M | SILICON TRIACS |
| TIC226N | SILICON TRIACS |
| TIC226S | SILICON TRIACS |
| TIC236 | SILICON TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIC226A | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226A_12 | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226B | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226C | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC226D | 制造商:POINN 制造商全稱(chēng):Power Innovations Ltd 功能描述:SILICON TRIACS |
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